1; Adopts diode end pump laser module
2; High speed for scribing
3; High precision
Equipment Performance:
1; Adopts diode end pump laser module
2; High level integration
3; Better laser beam quality
4; Lower running cost
5; Longer time without maintenance
6; The main key parts are imported
7; The simple structure for the whole machine
8; High speed for scribing
9; High precision
10; Continuous running for 24 hours
Applicable fields:
Scribing for mono-crystalline silicon, poly-crystalline silicon, amorphous-crystalline silicon, solar cell, wafer in solar industry.
The main technical parameters
Model number
SES10
Wavelength
1.064μ m
Scribing precision
± 10μ m
Max cutting thickness
1.2mm
Line width
≤ 0.03mm
Laser frequency
20kHz~100kHz
Max speed
230mm/s
Max laser power
≤ 10W
Worktable size
350× 350mm
Worktable moving speed
≥ 80mm/s
Power supply
220V/ 50Hz/ 3kVA
Cooling system
forced air cooling
No comments:
Post a Comment