all our cutting machine are imported from Japan,
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Mono crystal Silicon Wafer(Pseudo square)
Growth Method: CZ
Dimension: 125x125±0.5mm
Diagonal: 150±0.5mm
Square Angle: 90±0.3 degree
Orientation: 100±3 degree
Type of conductivity: P type
Dopant: Boron
Resitivity: 0.5-3 , 3-6 Ohm/cm
Content of Oxygen: 1x10 At/cm3
Content of Carbon: 5x 10 At/cm3
Life Time: ≥10 us
Surface Finish: As cut and cleaned
backside: As cut and cleaned
Bow, max: <50 μm
Saw marks depth:<30 μm
Thickness: 200±20
TTV: <50 μm
Surface: Without pin holes, cracks, stains and other contamination
Edge chips: 1 pcs not longer than 1 mm, not deeper than 0.5 mm
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