We can provide you solar japan fuji wafer 156*156 and 125*125mm for home or commercial or industrial etc
Property
Specification
Crystal and material properties
Crystallinity
Multicrystalline
Conductivity type
P-type
Dopant
Boron
Specific resistance
1.0 - 3.0 Wcm; 90% within 1-1.8 ohm-cm
Crystal size
£ 10 crystals per cm²
Oxygen concentration
£ 9.8 x 10
17
atoms/cm³
Carbon concentration
£ 5 x 10
16
atoms/cm³
Effective minority
carrier lifetime
1: ³ 1 µs
2: Average > 3.5 µs
3: No lifetime dip > 3 µs
Geometry
Shape
Square with 45±10° chamfer at the corner
Length of wafer edge
156 +/- 0,5 mm Cpk≥1.33
Minimum square area covered
Min (d-0.5 mm)x(d-0.5 mm), Max (d+0.5 mm)x(d+0.5 mm)
Square area, outside of
which no part of the wafer
can extend
Bevel edge width
1.5 ± 0.5 mm
Average thickness
200 ± 20 µm with Cpk≥1.33
Total thickness variation TTV
≤50 µm with Cpk≥1.33
Warp/Bow
≤40 µm with Cpk≥1.33
Appearance
Edge defect (through wafer)
≤5 mm with ≤0.5 mm
Surface chipping
None above 0.2 mm wide and 0.1 mm deep
Saw marks
depth £ 20 µm
Saw marks (steps)
depth £ 15 µm
Cracks and pin holes
No visual cracks and
pin holes
Surface properties
Wafer slicing
Glycol based wafering
Wafer cleaning
Water + detergent
Wafer surface
As cut, no stains with the
exception of water stains
and stains of silicon dust
Packaging
Packaging method
Cardboard boxes packed
in cardboard cartons
Labelling on each
Date / Time, Ingot number,
cardboard boxes
Box number, Number of
wafers, Thickness
Labelling on each
Carton Number, Wafer
cardboard cartons
description, Article number
Number of wafers, Date
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